2SA1179N6-TB-E datasheet

Маркировка

2SA1179N6-TB-E
Производитель

ON Semiconductor
Описание

ON Semiconductor 2SA1179N6-TB-E Collector- Base Voltage Vcbo: - 55 V Collector- Emitter Voltage Vceo Max: - 50 V Collector-emitter Saturation Voltage: - 0.15 V Configuration: Single Continuous Collector Current: - 150 mA Dc Current Gain Hfe Max: 600 Emitter- Base Voltage Vebo: - 5 V Gain Bandwidth Product Ft: 180 MHz Maximum Dc Collector Current: - 300 mA Maximum Operating Temperature: + 150 C Maximum Power Dissipation: 200 mW Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-59 Rohs: yes Transistor Polarity: PNP RoHS: yes Collector- Base Voltage VCBO: - 55 V Collector- Emitter Voltage VCEO Max: - 50 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 0.15 V Maximum DC Collector Current: - 300 mA Gain Bandwidth Product fT: 180 MHz DC Current Gain hFE Max: 600
Количество страниц

7 шт.
Формат

PDF
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Размер файла

163,40 KB